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DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

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4 Author(s)
Haiying Chen ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Chengfeng Qiu ; Man Wong ; Kwok, Hoi Sing

The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by DC sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently, a high DC sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )

Date of Publication:

May 2003

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