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High-density MIM capacitors using AlTaOx dielectrics

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6 Author(s)
Yang, M.Y. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Huang, C.H. ; Chin, A. ; Chunxiang Zhu
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The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-/spl kappa/ AlTaO/sub x/ fabricated at 400/spl deg/C. In addition, small voltage dependence of capacitance of <600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-/spl kappa/ AlTaO/sub x/ MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )