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This work investigates properties of gate oxides grown on nitrogen-implanted substrates. It was demonstrated that the location of nitrogen peak in the gate oxide, once fixed at the beginning of the oxidation step, does not change with continued oxidation. Using this property, nitrogen peak was engineered near the gate oxide interface with substrate and was shown to suppress boron penetration more effectively without any significant degradation of the channel mobility in comparison to the case where the nitrogen peak is located within the bulk of the gate oxide.
Date of Publication: May 2003