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Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

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3 Author(s)
Hafez, W. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Jie-Wei Lai ; Feng, M.

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 ×16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fmax of 230 GHz at the current density Jc of 650 kA/cm2. Typical BV/sub CEO/ values exceed 3.7 V.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )