Strained-Si on Si/sub 1-x/Ge/sub x/ MOSFET mobility model

A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. The model fits well experimental measurements.