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Time-dependent degradation laws have been widely used to predict the MOS long-term degradation characteristics and lifetime. The existing degradation laws, however, often fail to predict accurately the MOS lifetime if only a relatively small number of stress data points are measured. A simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. Data measured from three different MOS devices are analyzed in support of the model development.