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Here, for the first time, advanced simulation models are used to investigate the performance advantage of Schottky source/drain ultrathin-silicon technologies at a 25-nm gate length target. Schottky and doped source/drain MOSFETs were optimized and compared using a novel benchmark. Mixed-mode simulations of optimized devices in a two-stage NAND chain show an approximate 45% speed advantage of Schottky source/drain for one set of parameter choices. Contact requirements for Schottky source/drain, and for doped source/drain relative to ITRS targets through 2016, are discussed.
Date of Publication: May 2003