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A novel concept and a fabrication technique of strained SiGe-on-insulator (SGOI) pMOSFET are proposed and demonstrated. This device has an ultrathin strained SiGe channel layer, which is directly sandwiched by gate oxide and buried oxide layers. The mobility enhancement of 2.3 times higher than the universal mobility of conventional universal Si pMOSFETs was obtained for a pMOSFET with 19-nm-thick Si0.58Ge0.42 channel layer, which is formed by high-temperature oxidation of a Si0.9Ge0.1 layer grown on a Si-on-insulator (SOI) substrate. A fully depleted SGOI MOSFET with this simple single-layer body structure is promising for scaled SOI p-MOSFET with high current drive.