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Accurate, wideband characterization and optimization of high power LDMOS amplifier memory properties

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5 Author(s)
Eron, M. ; Ericsson Amplifier Technol. Inc., Hauppauge, NY, USA ; Martony, E. ; Fogel, Y. ; Jeckeln, E.
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Accurate, wideband measurements of high power LDMOS PCS band stages were carried out in an effort to quantify their memory characteristics. The measurements help identify intrinsic and extrinsic sources of memory in addition to a measurable parameter that can be used for improved design. Results of successful circuit optimization for memory are also presented.

Published in:

Microwave Symposium Digest, 2003 IEEE MTT-S International  (Volume:3 )

Date of Conference:

8-13 June 2003

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