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This paper presents the design, fabrication and testing of capacitive RF MEMS switches with a new, low processing cost dielectric layer on high-resistivity silicon substrate. The dielectric can be spun on the wafer and its parameters (dielectric constant and loss) can be controlled during fabrication to achieve the desired values. Both bridge- and cantilever-type switches were fabricated on high-/spl rho/ silicon substrate using a simple low cost four-mask process. Measured results are presented.