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Low cost RF MEMS switches using photodefinable mixed oxide dielectrics

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5 Author(s)
Guoan Wang ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Barstow, S. ; Jeyakumar, A. ; Papapolymerou, J.
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This paper presents the design, fabrication and testing of capacitive RF MEMS switches with a new, low processing cost dielectric layer on high-resistivity silicon substrate. The dielectric can be spun on the wafer and its parameters (dielectric constant and loss) can be controlled during fabrication to achieve the desired values. Both bridge- and cantilever-type switches were fabricated on high-/spl rho/ silicon substrate using a simple low cost four-mask process. Measured results are presented.

Published in:

Microwave Symposium Digest, 2003 IEEE MTT-S International  (Volume:3 )

Date of Conference:

8-13 June 2003