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Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation

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4 Author(s)
Sang-Mo Koo ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Stockholm, Sweden ; Zetterling, C.-M. ; Hyung-Seok Lee ; Ostling, M.

A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300°C. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 12 )