By Topic

Accurate electro-thermal model of avalanching junctions subject to ESD currents

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Codecasa, L. ; Dipt. di Elettronica e Informazione, Milano, Italy ; D'Amore, D. ; Maffezzoni, P.

A new electro-thermal model of avalanching silicon junctions subject to the abrupt and large currents of electro-static-discharge (ESD) phenomenon is presented. A reliable model of the avalanching junction is the core element for accurate CAD-based analysis of ESD failures.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 12 )