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Mid-infrared ring laser

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5 Author(s)
Krier, A. ; Phys. Dept., Lancaster Univ., UK ; Sherstnev, V.V. ; Wright, D. ; Monakhov, A.M.
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The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 μm and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 12 )

Date of Publication:

12 Jun 2003

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