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Monolithic micropower amplifier using SiGe n-MODFET device

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7 Author(s)
Vilches, A. ; Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK ; Fobelets, K. ; Michelakisy, K. ; Despotopoulos, S.
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A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe hetero-junction modulation doped FET (HMODFET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500 μW). The amplifier is fabricated and measured data of the power-gain against operating power are presented for the first time.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 12 )