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Transient ionizing radiation effects in devices and circuits

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1 Author(s)
Alexander, D.R. ; Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

A review and summary of over 40 years of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented. Emphasis is placed on the relationship of circuit effects to physical mechanisms at the transistor and diode level.

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Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 3 )