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Total ionizing dose effects in bipolar devices and circuits

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1 Author(s)
Pease, R.L. ; RLP Res., Los Lunas, NM, USA

The development of the investigation of total dose effects in bipolar devices and circuits is covered over the past 40 years. There are at least four chronological stages in this field of study highlighted by the early studies on discrete transistors, the effects of total dose on linear circuits and I2L, the effects of total dose on recessed field oxide digital circuits and, most recently, the low dose rate sensitivity of bipolar linear circuits.

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Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 3 )