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Total ionizing dose effects in MOS oxides and devices

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2 Author(s)
T. R. Oldham ; NASA Goddard Space Flight Center/QSS Group, Greenbelt, MD, USA ; F. B. McLean

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.

Published in:

IEEE Transactions on Nuclear Science  (Volume:50 ,  Issue: 3 )