Referenced Items are not available for this document.
A low-power low-phase-noise 1.9-GHz RF oscillator is presented. The oscillator employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18-μm CMOS process. This paper addresses design issues involved in codesigning micromachined resonators with CMOS circuitry to realize ultralow-power RF transceiver components. The oscillator achieves a phase-noise performance of -100 dBc/Hz at 10-kHz offset, -120 dBc/Hz at 100-kHz offset, and -140 dBc/Hz at 1-MHz offset. The startup time of the oscillator is less than 1 μs. The oscillator core consumes 300 μA from a 1-V supply.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:38
,
Issue:
7
)
Date of Publication: July 2003
- Page(s):
- 1271 - 1274
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 7688514
- Digital Object Identifier :
- 10.1109/JSSC.2003.813219
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2003
- Issue Date :
- July 2003
- Sponsored by :
- IEEE Solid-State Circuits Society
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