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Effect of electric field and temperature on hole mobility in Alq3 material

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2 Author(s)
S. P. Singh ; Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India ; V. L. Gupta

The current-voltage characteristics of an Alq3-based hole-only device (ITO/Alq3/Au) are measured against temperature. As the hole current is space-charge limited, the hole mobility μp against electric field and temperature was measured directly. The hole mobility exhibits a field dependence as observed for other disordered materials such as amorphous glasses.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 11 )