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The 1/f noise in Si0.8Ge0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si0.8Ge0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (Not) near the Fermi level (EF) in the device. However, all samples in this study, including the Si control and the Si0.8Ge0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 Å, revealed almost identical relative changes in 1/f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in Not at the EF in the devices during F-N stress.