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Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

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2 Author(s)
Fossum, J.G. ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Weimin Zhang

Device and circuit simulations using a process/physics-based compact MOSFET model (UFPDB) are done to project the scaled CMOS speed-performance enhancement that can be expected from strained-Si channels on relaxed Si1-xGex buffer layers in bulk Si. With the UFPDB process-based parameters associated with carrier mobility and velocity defined physically in terms of the Ge content x (0≤x≤0.50), and with threshold voltages (Vt) reduced due to the bandgap narrowing defined by x, but adjusted (for Ioff control) to equal those of the Si-channel control devices, UFPDB/Spice3 simulations of 60 nm CMOS ring oscillators predict only a small speed enhancement when Vt is adjusted via channel doping. The peak enhancement is 5% for x=0.20. However, when a p+ poly-SiGe gate is used to adjust Vt of the pMOSFET, a peak 16% speed enhancement at x=0.30 is predicted; for pragmatic x=0.20, the enhancement is 14%.

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 4 )