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Extension and source/drain design for high-performance FinFET devices

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9 Author(s)
J. Kedzierski ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Meikei Ieong ; E. Nowak ; T. S. Kanarsky
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Double gate devices based upon the FinFET architecture are fabricated, with gate lengths as small as 30 nm. Particular attention is given to minimizing the parasitic series resistance. Angled extension implants and selective silicon epitaxy are investigated as methods for minimizing parasitic resistance in FinFETs. Using these two techniques high performance devices are fabricated with on-currents comparable to fully optimized bulk silicon technologies. The influence of fin thickness on device resistance and short channel effects is discussed in detail. Devices are fabricated with fins oriented in the <100> and <100> directions showing different transport properties.

Published in:

IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 4 )