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Field dependence of impact ionization coefficients in In0.53Ga0.47As

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5 Author(s)
Ng, J.S. ; Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK ; Tan, C.H. ; David, J.P.R. ; Hill, G.
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Electron and hole ionization coefficients in In0.53Ga0.47As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm-1, supporting reports of slightly higher avalanche breakdown voltages in In0.53Ga0.47As than in GaAs p-i-n diodes.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 4 )

Date of Publication:

April 2003

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