By Topic

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Plotka, P. ; Semicond. Res. Inst., Sendai, Japan ; Nishizawa, J. ; Kurabayashi, T. ; Makabe, H.

Gallium arsenide (GaAs) transit-time diodes with tunnel injection of electrons (TUNNETT) with transit-time layer thickness of 100 and 150 nm were fabricated with molecular layer epitaxy (MLE). Continuous-wave fundamental-mode oscillation in the frequency range of 240 to 325 GHz in metal rectangular resonant 0.86 × 0.43 mm size (WR-3) cavities was obtained. Output power of -13 dBm was generated at 322 GHz. The fundamental mode operation, as well as experiments on different impedance matching configurations, suggest that it is possible to develop fundamental mode TUNNETT generators for the frequency range of 350 GHz to 1 THz. Operation of the TUNNETTs confirms device quality of the MLE.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 4 )