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GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

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9 Author(s)
Chang, S.J. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Lee, M.L. ; Sheu, J.K. ; Lai, W.C.
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Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (ITO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

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Electron Device Letters, IEEE  (Volume:24 ,  Issue: 4 )