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Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

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9 Author(s)
Ru-Chin Tu ; Opto-Electron. & Syst. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Tun, Chun-Ju ; Sheu, J.K. ; Wei-Hong Kuo
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InGaN/GaN multiple-quantum-well laser diode (LD) structures, including an Si-doped n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice (SPS) tunneling contact layer, are grown on c-face sapphire substrates by metalorganic vapor-phase epitaxy. The In/sub 0.23/Ga/sub 0.77/N/GaN(n/sup +/)-GaN(p) tunneling junction, which uses a low-resistivity n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN SPS instead of a high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "quasi-ohmic" contact. Experimental results indicate that LDs with n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN SPS contacting layers can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width is lengthened from 300 ns to 2 /spl mu/s, the lasing duration of the LD with Pt ohmic contact is three times longer than that of the LD with Ni/Au ohmic contacts. Therefore, we conclude that nitride-based LDs with an SPS reversed-tunneling contact layer may significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 4 )

Date of Publication:

April 2003

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