By Topic

Correction of the intensity-dependent phase delay in a silicon avalanche photodiode by controlling its reverse bias voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Miyata, T. ; Dept. of Mech. Eng., Niihama Nat. Coll. of Technol., Ehime, Japan ; Araki, T. ; Iwata, T.

When an intensity-modulated periodic light is incident on a reverse-biased silicon-avalanche photodiode (APD), the phase of the output signal from the APD over that of the incident light is delayed. The phase delay becomes larger with decreasing incident light intensity. This kind of phase delay is a serious problem for metrology that utilizes the APD as a photodetector. To solve this problem, we propose a new correction method: for situations of low light intensity, the reverse bias voltage applied for the APD is decreased. Adjustment of the reverse bias voltage enabled us to suppress the phase delay around 60° to be less than 0.2° for an incident light intensity of 0.5 μW, a modulation frequency of 600 MHz, and a wavelength of 632.8 nm.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:39 ,  Issue: 7 )