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Silicon-dioxide waveguides with low birefringence

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5 Author(s)
de Peralta, L.G. ; Nano Tech Center, Texas Tech Univ., Lubbock, TX, USA ; Bernussi, Ayrton A. ; Temkin, H. ; Borhani, M.M.
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We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to 10 wt%, at a constant phosphorus content of 4.8%. A transition from compressive to tensile stress was observed at a boron concentration of 9.1%. Pedestal-type waveguides formed with the high-boron top cladding layer show low loss of 0.02 dB/cm. Arrayed waveguide grating devices with a polarization-dependent wavelength shift of 0.01 nm and excellent stability have been demonstrated.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:39 ,  Issue: 7 )

Date of Publication:

July 2003

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