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This paper outlines the design and performance of a GaAs MESFET MMIC front-end receiver circuit. Its main characteristics are a 17GHz bandwidth, 62dBΩ gain and 10.3pA/√Hz input referred noise. Input sensitivity is -21dBm with a good linear response which extends to -3dBm. Tolerance to high input capacitance assures 10Gbps operation with input capacitance exceeding 260fF. Total power dissipated by the circuit is 280mW. The design approach focused on the effect of bond-wire inductance and its impact on manufacturing reliability. Special attention was given to noise analysis and optimisation, stability requirements, output impedance matching and layout. On-wafer characterization of this circuit shows good yield with high similarity among the results of different chips. Measured results for a bonded chip in a metal case agree well with simulation results, confirming the validity of the simulation models, the quality of the UMS PH15 process technology and of the proposed design.
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on (Volume:2 )
Date of Conference: 25-28 May 2003