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A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction

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6 Author(s)
Liu, Y. ; Univ. of Southern California, Los Angeles, CA, USA ; Forrest, S.R. ; Hladky, J. ; Lange, M.J.
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The authors discuss the fabrication, performance, and design of a novel, planar In0.53Ga0.47 As/InP separate absorption and multiplication region avalanche photodiode (SAM-APD) with floating guard rings and a double Zn diffused junction. The APD, grown by both vapor phase epitaxy and metalorganic vapor phase epitaxy, is observed to have a uniform gain of 85, a minimum primary dark current density of 5×10-6 A/cm2 at 90% of breakdown, and a capacitance of 0.4 pF for a front-side illuminated device. Both experimental and analytical results show that the double-diffused floating guard ring structure prevents edge breakdown, and also greatly reduces the electric field along the semiconductor/insulator surface. The operation mechanisms and the optimum design of the planar APD based on a two-dimensional device model are discussed

Published in:

Lightwave Technology, Journal of  (Volume:10 ,  Issue: 2 )

Date of Publication:

Feb 1992

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