By Topic

A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Liu, Y. ; Univ. of Southern California, Los Angeles, CA, USA ; Forrest, S.R. ; Hladky, J. ; Lange, M.J.
more authors

The authors discuss the fabrication, performance, and design of a novel, planar In0.53Ga0.47 As/InP separate absorption and multiplication region avalanche photodiode (SAM-APD) with floating guard rings and a double Zn diffused junction. The APD, grown by both vapor phase epitaxy and metalorganic vapor phase epitaxy, is observed to have a uniform gain of 85, a minimum primary dark current density of 5×10-6 A/cm2 at 90% of breakdown, and a capacitance of 0.4 pF for a front-side illuminated device. Both experimental and analytical results show that the double-diffused floating guard ring structure prevents edge breakdown, and also greatly reduces the electric field along the semiconductor/insulator surface. The operation mechanisms and the optimum design of the planar APD based on a two-dimensional device model are discussed

Published in:

Lightwave Technology, Journal of  (Volume:10 ,  Issue: 2 )