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Pulse response of avalanche photodiodes

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2 Author(s)
Roy, B.C. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; Chakrabarti, N.B.

A study has been made of the time response of heterostructure avalanche photodiodes for InGaAs and InP/InGaAs material systems. A transfer/scattering matrix method, where the matrix parameters are related to the ionization coefficients, has been used. A time domain study has been carried out to find the time variation of electron and hole number densities and currents

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Lightwave Technology, Journal of  (Volume:10 ,  Issue: 2 )