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Photorefractive effects in proton exchanged LiTaO3 optical waveguides

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2 Author(s)
M. M. Howerton ; SFA Inc., Landover, MD, USA ; W. K. Burns

A circuit model is proposed to describe photorefractive effects in LiNbO3/LiTaO3 channel waveguides at any intensity level. Capacitive charge storage at the waveguide boundaries is assumed to be provided by trapping states associated with photoconductivity. A consequence of this model is that photoconductive transients are independent of optical intensity at low intensity levels. Photovoltaic and photoconductive effects in proton exchange LiTaO3 channel waveguides were experimentally investigated. Dark conductivities of 2×10-15 to 2 ×10-14(Ω-cm)-1 were extrapolated from photoconductivities up to 2×10-13 (Ω-cm)-1 for power levels of 0.1 to 3 mW. Large DC voltage dependent effects on the conductivity were observed. Straight channel waveguides were observed to be free of photovoltaic effects for output power levels below 35-75 mW

Published in:

Journal of Lightwave Technology  (Volume:10 ,  Issue: 2 )