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Lumped element based Doherty power amplifier topology in CMOS process

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3 Author(s)
Tongchoi, C. ; Microelectron. Res. Center, Mahanakorn Univ. of Technol., Bangkok, Thailand ; Chongcheawchamnan, M. ; Worapishet, A.

A CMOS microwave Doherty power amplifier, which maintains high power-added efficiency (PAE) over a wide range of output power, is developed. The implementation is based on a combination of class AB and class C CMOS power amplifiers where the quarter-wave transformers are realized using lumped-element LC equivalents for high efficiency and compact design. Also outlined are practical design guideline and considerations. Validation of the implementation approach is given through the simulated Doherty amplifier in 0.25 μm CMOS process featuring 200 mW power, 10 dB power gain and more than 40% PAE up to 5.5-dB backed off from the maximum output power at a 3V supply voltage.

Published in:

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on  (Volume:1 )

Date of Conference:

25-28 May 2003