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Integrated 1.3μm DFB laser electro-absorption modulator based on identical MQW-double stack active layer with 25GHz small-signal modulation performance

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2 Author(s)
Stegmueller, B. ; Corporate Res. Photonics, Infineon Technol., Munich, Germany ; Hanke, C.

25GHz small signal modulation bandwidth for a 1.31μm electro-absorption modulator monolithically integrated with a DFB laser diode has been achieved using an identical multiple quantum well-layer structure composed of two different QW types.

Published in:

Indium Phosphide and Related Materials, 2003. International Conference on

Date of Conference:

12-16 May 2003