Selective area growth of InP through narrow openings by MOCVD and its application to InP HBT

Selective growth behavior of InP through narrow openings (<2 /spl mu/m) by metal-organic chemical vapor deposition (MOCVD) was investigated. The lateral overgrowth was observed to be significantly affected by both the opening width and orientation. The lateral overgrowth showed a 'diffraction-like' behavior, with the lateral overgrowth length increasing with decreasing opening width. The application of InP lateral overgrowth to InP/InGaAs heterojunction bipolar transistor (HBT) is proposed and the device behaviors of the HBT prototypes with the extrinsic base laterally overgrown on buried SiO/sub 2/ are demonstrated.