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Selective area growth of InP through narrow openings by MOCVD and its application to InP HBT

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3 Author(s)
Yingda Dong ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Okuno, Y.L. ; Mishra, Umesh K.

Selective growth behavior of InP through narrow openings (<2 μm) by metal-organic chemical vapor deposition (MOCVD) was investigated. The lateral overgrowth was observed to be significantly affected by both the opening width and orientation. The lateral overgrowth showed a 'diffraction-like' behavior, with the lateral overgrowth length increasing with decreasing opening width. The application of InP lateral overgrowth to InP/InGaAs heterojunction bipolar transistor (HBT) is proposed and the device behaviors of the HBT prototypes with the extrinsic base laterally overgrown on buried SiO2 are demonstrated.

Published in:

Indium Phosphide and Related Materials, 2003. International Conference on

Date of Conference:

12-16 May 2003