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We report here on the bonding of a thin InP(001) layer onto a Si host substrate via silicon dioxide, to be used as a substrate for heteroepitaxy. With this end in mind, these new InP/SiO2/Si substrates were compared to standard InP substrates through the growth by Solid Source Molecular Beam Epitaxy of (lattice-matched) InP thick layers and (-0.8% lattice-mismatched) InAs0.25P0.75 and In0.65Ga0.35As thick layers. The layers thus obtained were characterized by in-situ Reflection High-Energy Electron Diffraction (RHEED), and ex-situ Atomic Force Microscopy (AFM), double crystal x-ray diffraction (DXRD) and photoluminescence (PL). Finally, the quality of the InP/SiO2/InP heterostructure is assessed as a substrate for optoelectronics by the photoluminescence spectrum of a 60 Å thick InAs0.65P0.35 strained quantum well confined by 0.2 μm thick InP barriers. We conclude that all the characteristics required for optoelectronic application are fulfilled.