High quality epitaxial growth on new InP/Si substrate

We report here on the bonding of a thin InP(001) layer onto a Si host substrate via silicon dioxide, to be used as a substrate for heteroepitaxy. With this end in mind, these new InP/SiO/sub 2//Si substrates were compared to standard InP substrates through the growth by Solid Source Molecular Beam Epitaxy of (lattice-matched) InP thick layers and (-0.8% lattice-mismatched) InAs/sub 0.25/P/sub 0.75/ and In/sub 0.65/Ga/sub 0.35/As thick layers. The layers thus obtained were characterized by in-situ Reflection High-Energy Electron Diffraction (RHEED), and ex-situ Atomic Force Microscopy (AFM), double crystal x-ray diffraction (DXRD) and photoluminescence (PL). Finally, the quality of the InP/SiO/sub 2//InP heterostructure is assessed as a substrate for optoelectronics by the photoluminescence spectrum of a 60 /spl Aring/ thick InAs/sub 0.65/P/sub 0.35/ strained quantum well confined by 0.2 /spl mu/m thick InP barriers. We conclude that all the characteristics required for optoelectronic application are fulfilled.