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1.26-μm-emitting MOCVD-grown InGaAsN single quantum-well lasers with barriers of Eg=1.62 eV InGaAsP exhibit a room-temperature threshold current density of 440 A/cm2 and a characteristic temperature To as high as 128 K and 98 K in the temperature ranges of 10-50°C and 50-100°C, respectively. A growth pause annealing technique is found to be critical for achieving high photoluminescence intensity. Higher-bandgap barrier materials increase the valence band offset and lead to suppression of carrier leakage, which potentially results in improved temperature characteristics of the InGaAsN quantum-well lasers.
Date of Conference: 12-16 May 2003