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Dynamic electrical characterization of CMOS-like thin film transistor circuits

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3 Author(s)
G. Gautier ; Center Commun de Microelectron. de l'Ouest, Inst. d'Electron. et de Telecommun. de Rennes., Rennes, France ; S. Crand ; O. Bonnaud

This tutorial is intended to graduate students, specialized in microelectronics formation. Before this work, the concerned students have spent one week in the cleanroom. In this training, with the help of teachers of the common microelectronics center, they processed and characterized a specific thin film transistor technology. The main goal was to set-up a bench that allows measuring dynamic parameters such as rise time, fall time and oscillator frequency directly on glass substrate and to analyze and explain the results on the base of classical modeling available for VLSI CMOS circuits.

Published in:

Microelectronic Systems Education, 2003. Proceedings. 2003 IEEE International Conference on

Date of Conference:

1-2 June 2003