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Feasibility study of on-chip class E DC-DC converter

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3 Author(s)
Suetsugu, T. ; Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Japan ; Kiryu, S. ; Kazimierczuk, M.K.

A 200 mW, 800 MHz class E DC-DC converter is designed using a 0.6 μm CMOS process and then simulated. A 22 nH spiral inductor is used in the resonant circuit. An integrated feedback controller with a VCO is used for the output voltage regulation. It is shown that the class E inverter is an excellent candidate for on-chip switching converters because of very high efficiency, and the inductor can be minimized at high operating frequencies. The simulated converter efficiency was 72% at 4.5 V output voltage, 200 mW output power, and 800 MHz switching frequency.

Published in:

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on  (Volume:3 )

Date of Conference:

25-28 May 2003