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Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

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3 Author(s)
Banerjee, Souri ; Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan ; Huang, Shaoyun ; Oda, S.

A metal-oxide-semiconductor field-effect transistor memory device using nanocrystalline Si (nc-Si) dots as a floating gate over a short and narrow channel has been fabricated. Its operation at 77 K presents experimental evidence of storing and ejection of electrons associated with the nc-Si dot in the active area of the device. Though the lifetime of a single electron is apparently longer than the case when it is associated with another electron in the same nc-Si dot, a distribution in lifetime has been generally observed for the stored electrons in the nc-Si dots with the present memory devices.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:2 ,  Issue: 2 )

Date of Publication:

June 2003

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