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Browse Journals & Magazines > Nanotechnology, IEEE Transact ...> Volume:2 Issue:2 Help

Performance simulation of nanoscale silicon rod field-effect transistor logic

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3 Author(s)
Dwyer, C. ; Dept. of Comput. Sci., Univ. of North Carolina, Chapel Hill, NC, USA ; Vicci, L. ; Taylor, R.M.

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline.

Published in:
Nanotechnology, IEEE Transactions on  (Volume:2 ,  Issue: 2 )

Date of Publication: June 2003

Page(s):
69 - 74
ISSN :
1536-125X
INSPEC Accession Number:
7669616
Digital Object Identifier :
10.1109/TNANO.2003.812592
Product Type:
Journals & Magazines
Date of Current Version :
20 June 2003
Issue Date :
June 2003
Sponsored by :
IEEE Nanotechnology Council

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