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Performance simulation of nanoscale silicon rod field-effect transistor logic

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3 Author(s)
Dwyer, C. ; Dept. of Comput. Sci., Univ. of North Carolina, Chapel Hill, NC, USA ; Vicci, L. ; Taylor, R.M.

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline.

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Nanotechnology, IEEE Transactions on  (Volume:2 ,  Issue: 2 )