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Effect of a current-sensing resistor on required MOSFET size

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2 Author(s)
B. Bryant ; Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA ; M. K. Kazimierczuk

The effect of a current-sensing resistor used in current-mode control of pulsewidth modulator (PWM) converters on required MOSFET aspect ratio, the ratio of channel width to channel length generally known as W/L, is studied. The results can also be applied to the effect of source parasitic resistance in a power MOSFET. These resistances require a significant increase in aspect ratio to achieve a desired maximum current capability. Experimental results are presented verifying the validity of the theoretical results.

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IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications  (Volume:50 ,  Issue: 5 )