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An analytical model for optimization of programming efficiency and uniformity of split gate source-side injection SuperFlash memory

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3 Author(s)
Huinan Guan ; Dept. of Electr. & Comput. Eng., Univ. of California, Irvine, CA, USA ; D. Lee ; G. P. Li

An analytical model for evaluating the programming efficiency and uniformity of SST SuperFlash cells is developed for the first time. Starting with a two-dimensional electric field analysis, this model calculates the effective hot electron injection-induced gate current during programming. Based on a full transient simulation of the calculated gate current, the time to program is then developed and used as a figure of merit to evaluate SST cells programming. The time-to-program model predicts the nonlinear transformation from control-floating gate coupling ratios to the programming speed and the programming distribution broadening correlates with coupling ratios. The model also suggests that higher bias voltage of (Vd-Vcg) and a lower coupling ratio should result in better programming efficiency and uniformity.

Published in:

IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 3 )