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Impact of geometrical scaling on low-frequency noise in SiGe HBTs

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4 Author(s)
Zhenrong Jin ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Cressler, J.D. ; Guofu Niu ; Joseph, A.J.

The influence of geometrical scaling on low-frequency noise in SiGe HBTs is presented. Small-size transistors show a strong variation in noise across many samples, whereas the noise in larger devices is more statistically reproducible. This size-dependent variation in noise can produce challenges for accurate compact modeling. This effect is investigated using reverse-bias emitter-base stress and calculations based on the superposition of generation/recombination noise.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 3 )

Date of Publication:

March 2003

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