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A 0.18-μm RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

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6 Author(s)
Sato, F. ; Adv. Technol. Dev. Div., NEC Corp., Kanagawa, Japan ; Hashimoto, T. ; Fujii, H. ; Yoshida, H.
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This paper describes an RF SiGe BiCMOS technology based on a standard 0.18-μm CMOS process. This technology has the following key points: 1) A double-poly self-aligned SiGe-HBT is produced by adding a four-mask process to the CMOS process flow-this HBT has an SiGe epitaxial base selectively grown on an epi-free collector; 2) two-step annealing of CMOS source/drain/gate activation is utilized to solve the thermal budget tradeoff between SiGe-HBTs and CMOS; and 3) a robust Ge profile design is studied to improve the thermal stability of the SiGe-base/Si-collector junction. This process yields 73-GHz fT, 61-GHz fmax SiGe HBTs without compromising 0.18-μm p+/n+ dual-gate CMOS characteristics.

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 3 )