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Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain NMOS transistors

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9 Author(s)
Jeamsaksiri, W. ; Inter-Univ. Micro-Electron. Center, Leuven, Belgium ; Jurczak, M. ; Grau, L. ; Linten, D.
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It has been known that using selective epitaxial growth (SEG) of silicon, to elevate source/drain regions, is beneficial to digital CMOS by reducing the junction leakage. In addition, this architecture also reduces the gate resistance by enabling a T-shape gate and allowing thicker silicides, which is beneficial for RF-CMOS regarding increased maximum oscillation frequency (fmax) and lowering of the noise figure (NF). In this paper, we report the impact of the SEG-deep source/drain implant (DSDI) process sequence and Co silicide thickness on DC and RF performance of NMOS transistors. Up to a 28%-45% improvement in fmax is achievable due to a T-shaped gate and thicker Co, made possible by an elevated source/drain (ES/D) architecture. The maximum transconductance (gm) of the ES/D device reaches a value of 1100 mS/mm, which in turn gives a very high fT of 150 GHz. The low gate sheet resistance obtained with this architecture is also very beneficial for suppressing noise figure in the low-noise amplifier (LNA) circuit demonstrated in this paper. Furthermore, it is shown by simulation that the noise performance of an RF LNA improves due to the SEG and the Co thickness in the T-shaped gate of the NMOS transistor.

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 3 )