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Integrating the entire system on a chip (SoC) is one of the main challenges for many researchers all over the world. One of the major breakthroughs toward achieving this goal has been the ability to manufacture multiple gate oxides for different requirements on the same chip. The most attractive of the techniques currently in the literature is the implantation of nitrogen in silicon, which can be used to achieve the goal of multiple gate oxide thickness. The rate of oxidation depends on the amount of nitrogen incorporated at the silicon/silicon oxide interface. By modulating the amount of nitrogen incorporated at the interface, the rate of oxidation and hence the oxide thickness can be moderated. This paper reviews the diffusion, oxidation, and device issues pertaining to the use of nitrogen implants in silicon and also compares it to other implant-based techniques related to the achievement of multiple oxide thickness across the chip for SoC integration.