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RF CMOS on high-resistivity substrates for system-on-chip applications

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14 Author(s)
K. Benaissa ; Texas Instrum. Inc., Dallas, TX, USA ; Jau-Yuann Yang ; D. Crenshaw ; B. Williams
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The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation. We also discuss the integration issues including latch-up and well-well isolation in a 0.35-μm Cu metal pitch, 0.1-μm-gate-length RF CMOS technology.

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IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 3 )