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Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

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6 Author(s)
Jeong-Soo Lee ; Dept. of Electr. Eng., Univ. of Texas, Richardson, TX, USA ; Choi, Yang-Kyu ; Daewon Ha ; Balasubramanian, S.
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The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 3 )