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Air-gap polycrystalline silicon thin-film transistors for fully integrated sensors

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4 Author(s)
Mahfoz-Kotb, H. ; Groupe de Microelectronique, Univ. Rennes, France ; Salaun, A.C. ; Mohammed-Brahim, T. ; Bonnaud, O.

Air gap thin-film transistors (TFTs) were fabricated using a solid phase crystallization process. Undoped polycrystalline silicon (polysilicon) was used as the active layer and a highly doped polysilicon bridge was used as the gate, which promotes the air gap. These TFTs have comparable threshold voltage (V/sub T/) and subthreshold slope characteristics to TFTs fabricated using pulsed laser crystallization, and using silicon dioxide as gate insulator. The low value of V/sub T/ is very important for low power consumption. Moreover, the air-gap TFT fabrication process is compatible with low-temperature glass substrate technology, which allows the integration of sensors and electronics circuits.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 3 )